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β-Ga2O3
Novel Crystal Technology, Inc. is a carve-out venture from Tamura and a technology transfer venture from the National Institute of Information and Communications Technology (NICT). Novel Crystal Technology, Inc. is working on the R&D of β-type gallium oxide (β-Ga2O3), a promising candidate for semiconductor material in new-generation power devices. Gallium oxide power devices with medium to high breakdown voltage are highly expected to contribute to energy saving.
β-Ga2O3 SBDs on high-quality 100-mm β-Ga2O3 epitaxial wafer
β-Ga2O3 is a new semiconductor material for power devices and has larger band-gap energy than SiC and GaN. Therefore, it will likely be used to make that can withstand high voltages and low resistance semiconductors. In addition, since growing β-Ga2O3 single crystal form a melt it is possible to provide high quality substrates with low cost compared with SiC and GaN to the market.
■Relationship between theoretical on-resistance and breakdown voltage
■Reasons for low cost of β-Ga2O3
| SiC, GaN | β-Ga2O3 | |
Growth rate | Slow |
Fast |
Substrate process |
Difficult | Easy |
| Growth method | Vapor growth method | Melt growth method |
Applications
1) Power electronics
2) Devices in extreme environment
3) Other applications
1) Power electronics
|
Electric vehicles |
Railroad vehicles |
Renewable energy |
Smart grid |
|
Nuclear reactors (radiation) |
Space (radiation, electromagnetic waves) |
|
High sensitivity image sensors |
Scintillators (medical, security) |
Ultraviolet sensors |
Press release from Novel Crystal Technology, Inc.
(Jumps to the webpage of Novel Crystal Technology, Inc.)
2021.12.24 The world’s first ampere-class 1200-V breakdown-voltage gallium oxide Schottky barrier diode
Movie
● Novel Crystal Technology, Company video (Be broadcasted at the 2024 MRS Spring Meeting & Exhibition)
Inquiry
Novel Crystal Technology, Inc.
